Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration
Author:
Affiliation:
1. Peking University,Institute of Microelectronics,Beijing,P. R. China,100871
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797932.pdf?arnumber=9797932
Reference11 articles.
1. Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network
2. Investigation of statistical retention of filamentary analog RRAM for neuromorphic computing;zhao;IEDM,2017
3. A Machine-Learning-Resistant 3D PUF with 8-layer Stacking Vertical RRAM and 0.014% Bit Error Rate Using In-Cell Stabilization Scheme for IoT Security Applications
4. Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk
5. Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices
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1. Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing;IEEE Transactions on Electron Devices;2024-01
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