Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction-Reference-Cited by-同舟云学术

Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction

Published:2015-04 Issue:4 Volume:51 Page:1-7
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Kim Younghyun,Takenaka Mitsuru,Takagi Shinichi

Funder

New Energy and Industrial Technology Development Organisation within the Strategic Information and Communications Research and Development Promotion Programme through the Ministry of Internal Affairs and Communications Project entitled Integrated Photonics-Electronics Convergence System Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/7035160/07054621.pdf?arnumber=7054621

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