SCAR: Power Side-Channel Analysis at RTL Level-Reference-Cited by-同舟云学术

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SCAR: Power Side-Channel Analysis at RTL Level

Published:2024-06 Issue:6 Volume:32 Page:1110-1123
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Srivastava Amisha¹^ORCID,Das Sanjay¹^ORCID,Choudhury Navnil¹^ORCID,Psiakis Rafail²^ORCID,Silva Pedro Henrique²^ORCID,Pal Debjit³^ORCID,Basu Kanad¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson, TX, USA

2. Secure Systems Research Center, Technology Innovation Institute, Abu Dhabi, United Arab Emirates

3. Department of Electrical and Computer Engineering, University of Illinois Chicago, Chicago, IL, USA

Funder

Technology Innovation Institute (TII), Abu Dhabi, United Arab Emirates

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/92/10536717/10508974.pdf?arnumber=10508974

Reference49 articles.

1. Side-channel attack pitfalls;Tiri

2. Power Side-Channel Attack Analysis: A Review of 20 Years of Study for the Layman

3. Side channel attack-survey;Persial;Int. J. Adv. Sci. Res. Rev.,2011

4. Fast and Comprehensive Simulation Methodology for Layout-Based Power-Noise Side-Channel Leakage Analysis

5. A Fast Side-Channel Leakage Simulation Technique Based on IC Chip Power Modeling

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