A μ-GA Oriented ANN-Driven: Parameter Extraction of 5G CMOS Power Amplifier-Reference-Cited by-同舟云学术

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A μ-GA Oriented ANN-Driven: Parameter Extraction of 5G CMOS Power Amplifier

Published:2024-09 Issue:9 Volume:32 Page:1569-1577
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Samira Delwar Tahesin¹^ORCID,Siddique Abrar¹^ORCID,Aras Unal¹,Lee Yangwon²,Ryu Jee Youl¹

Affiliation:

1. Department of Smart Robot Convergence and Application Engineering, Pukyong National University, Busan, Republic of Korea

2. Department of Spatial Information Engineering, Pukyong National University, Busan, Republic of Korea

Funder

NationalResearch Foundation (NRF) of Korea through the BK21 FOUR Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/92/10648891/10582892.pdf?arnumber=10582892

Reference31 articles.

1. A novel dual mode configurable and tunable high-gain, high-efficient CMOS power amplifier for 5G applications

2. A 19.7-38.9-GHz Ultrabroadband PA With Phase Linearization for 5G in 28-nm CMOS Process

3. Millimeter-Wave Frequency Reconfigurable Dual-Band CMOS Power Amplifier for 5G Communication Radios

4. A 24–30 GHz 31.7% Fractional Bandwidth Power Amplifier With an Adaptive Capacitance Linearizer

5. A Broadband Transformer-Based Power Amplifier Achieving 24.5-dBm Output Power Over 24–41 GHz in 65-nm CMOS Process

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