A Radiation-Hardened CMOS Full-Adder Based on Layout Selective Transistor Duplication-Reference-Cited by-同舟云学术

A Radiation-Hardened CMOS Full-Adder Based on Layout Selective Transistor Duplication

Published:2021-08 Issue:8 Volume:29 Page:1596-1600
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Azimi Sarah^ORCID,De Sio Corrado^ORCID,Sterpone Luca^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/92/9502420/09457491.pdf?arnumber=9457491

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