A Complete Analytical Model for MOS-HEMT Biosensors: Capturing the Effect of Stern Layer and Charge Screening on Sensor Performance-Reference-Cited by-同舟云学术

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A Complete Analytical Model for MOS-HEMT Biosensors: Capturing the Effect of Stern Layer and Charge Screening on Sensor Performance

Published:2021-04 Issue:4 Volume:5 Page:1-4
ISSN:2475-1472
Container-title:IEEE Sensors Letters
language:
Short-container-title:IEEE Sens. Lett.

Author:

Varghese Arathy,Das Pallabi^ORCID,Tallur Siddharth^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7782634/9384133/09376098.pdf?arnumber=9376098

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor;Journal of The Electrochemical Society;2024-08-01

2. Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology;IEEE Sensors Journal;2024-05-15

3. Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions;Materials Science in Semiconductor Processing;2024-05

4. Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing;Engineering Research Express;2024-04-22

5. Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection;Physica Scripta;2024-04-04

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