Development of medium voltage SiC power technology for next generation power electronics-Reference-Cited by-同舟云学术

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Development of medium voltage SiC power technology for next generation power electronics

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)
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Author:

Van Brunt Edward,Grider David,Pala Vipindas,Ryu Sei-Hyung,Casady Jeff,Palmour John

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7284613/7295956/07295981.pdf?arnumber=7295981

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on Common-Mode Capacitive Couplings in Current Sensors for Medium Voltage Converter Enabled by 10kV SiC MOSFETs;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Noise Analysis of Current Sensor for Medium Voltage Power Converter Enabled by Silicon-Carbide MOSFETs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

3. Test Platform for Comparative Evaluation of 690 V – 4160 V Power Electronic Converters;2022 IEEE 13th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2022-06-26

4. Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT;IEEE Open Journal of Power Electronics;2022

5. Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack;2020 IEEE Applied Power Electronics Conference and Exposition (APEC);2020-03

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