Impact of Ge profiles on neutron-induced displacement damage effect in SiGe HBT-Reference-Cited by-同舟云学术

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Impact of Ge profiles on neutron-induced displacement damage effect in SiGe HBT

Published:2022-10-25 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
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Author:

Wei Jia-Nan¹,Fu Xiao-Jun¹,Du Xiang²,Zhang Pei-Jian¹,Luo Ting¹,Zhang Jin-Xin³

Affiliation:

1. Science and Technology on Analog Integrated Circuit Laboratory,Chongqing,China,400060

2. Southwest China Research Institute of Electronic Equipment,Chengdu,China,610072

3. Xidian University,School of Aerospace Science and Technology,Xi'an,China,710126

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963220.pdf?arnumber=9963220

Reference8 articles.

1. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

2. Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects

3. Deep‐level transient spectroscopy studies of minority carrier traps in neutron‐irradiated silicon

4. Displacement Damage Effects in Irradiated Semiconductor Devices

5. Charge separation for bipolar transistors

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