A Novel Double Trench 4H-SiC MOSFET with Integrated Schottky Barrier Diode-Reference-Cited by-同舟云学术

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A Novel Double Trench 4H-SiC MOSFET with Integrated Schottky Barrier Diode

Published:2022-10-25 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
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Author:

Zhang Jinping¹,Wu Qinglin¹,Zou Hua¹,Zhang Bo¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China,610054

Funder

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963161.pdf?arnumber=9963161

Reference7 articles.

1. 4H‐SiC trench MOSFET with integrated fast recovery MPS diode

2. SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

3. High performance of high-voltage 4H-SiC Schottky barrier diodes

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