Analysis of Electromagnetic Noise From Switching Power Modules Using Wide Band Gap Semiconductors
Author:
Affiliation:
1. Graduate School of Science, Technology and Innovation, Kobe University, Kobe, Japan
2. Graduate School of System Informatics, Kobe University, Kobe, Japan
Funder
Development of Technical Examination Services Concerning Frequency Crowding, Ministry of Internal Affairs and Communication, Japan
ICOM Foundation, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/8566057/9980833/09893896.pdf?arnumber=9893896
Reference11 articles.
1. Development of GaN Technology-Based DC/DC Converter for Hybrid UAV
2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
3. Evaluation of Undesired Radio Waves Below −170 dBm/Hz From Semiconductor Switching Devices for Impact on Wireless Communications
4. Analysis and Comparison of the Radiated Electromagnetic Interference Generated by Power Converters With Si MOSFETs and GaN HEMTs
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