A Low Complexity Active Gate Driver to Damp the Oscillations Caused by Switching Power Transistors-Reference-Cited by-同舟云学术

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A Low Complexity Active Gate Driver to Damp the Oscillations Caused by Switching Power Transistors

Published:2022-06-22 Issue: Volume: Page:
ISSN:
Container-title:2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)
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Author:

Raviola Erica¹,Fiori Franco¹

Affiliation:

1. Electronics and Telecommunication Dpt. Politecnico di Torino,microEMC Group,Turin,Italy

Funder

Politecnico di Torino

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9841661/9841952/09842166.pdf?arnumber=9842166

Reference16 articles.

1. Experimental Investigations on the Tuning of Active Gate Drivers under Load Current Variations

2. Automatic optimization of IGBT gate driving waveform using simulated annealing for programmable gate driver IC

3. An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices

4. An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET

5. Investigation on the Switching Waveforms of GaN Power Devices to Gate Current Profiles

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Damping of Ringing Affecting Power Transistors by Means of Active Gate Drivers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04

2. Analysis of Space Magnetic Field Coupling Effect on Transient Process of Power MOSFET;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05

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