Advanced DICE Based Triple-Node-Upset Recovery Latch with Optimized Overhead for Space Applications-Reference-Cited by-同舟云学术

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Advanced DICE Based Triple-Node-Upset Recovery Latch with Optimized Overhead for Space Applications

Published:2023-10-14 Issue: Volume: Page:
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Container-title:2023 IEEE 32nd Asian Test Symposium (ATS)
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Author:

Yan Aibin¹,Li Xuehua¹,Gao Zhongyu¹,Huang Zhengfeng²,Ni Tianming³,Wen Xiaoqing⁴

Affiliation:

1. School of Computer Science and Technology, Anhui University,Hefei,China

2. School of Microelectronics, Hefei University of Technology,Hefei,China

3. School of Integrated Circuits, Anhui Polytechnic University,Wuhu,China

4. Kyushu Institute of Technology,Department of Computer Science and Networks,Fukuoka,Japan

Funder

NSFC of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10317938/10317940/10317977.pdf?arnumber=10317977

Reference31 articles.

1. Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets

2. We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation Tolerance

3. Analysis and Design of Nanoscale CMOS Storage Elements for Single-Event Hardening With Multiple-Node Upset

4. Design of A Novel 12T Radiation Hardened Memory Cell Tolerant to Single Event Upsets (SEU);hu;IEEE Transactions on Emerging Topics in Computing,2017

5. A Sextuple Cross-Coupled Dual-Interlocked-Storage-Cell based Multiple-Node-Upset Self-Recoverable Latch

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