A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier-Reference-Cited by-同舟云学术

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A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier

Published:1987-12 Issue:12 Volume:35 Page:1494-1500
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:en
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Bandy S.G.,Nishimoto C.K.,Yuen C.,Larue R.A.,Day M.,Eckstein J.,Tan Z.C.H.,Webb C.,Zdasiuk G.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx6/22/25177/01133880.pdf?arnumber=1133880

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An approach to distributed amplifier based on a design-oriented FET model;IEEE Transactions on Microwave Theory and Techniques;1995

2. HEMT Devices;Compound and Josephson High-Speed Devices;1993

3. Reliability of multi-channel Ga1−xAlxas high electron mobility transistor (HEMT) integrated circuits;Quality and Reliability Engineering International;1991-11

4. d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures;Solid-State Electronics;1990-11

5. Selected technology summaries for microwave theory and techniques-1988;IEEE Transactions on Microwave Theory and Techniques;1989-06

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