Roughness-enhanced reliability of MOS tunneling diodes-Reference-Cited by-同舟云学术

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Roughness-enhanced reliability of MOS tunneling diodes

Published:2002-07 Issue:7 Volume:23 Page:431-433
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin C.-H.,Yuan F.,Shie C.-R.,Chen K.-F.,Hsu B.-C.,Lee M.H.,Pai W.W.,Liu C.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/21849/01015232.pdf?arnumber=1015232

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