On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well-Reference-Cited by-同舟云学术

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On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

Published:2019-08 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
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Author:

Tiwari Amit K.,Perkin S.,Lophitis N.,Antoniou M.,Trajkovic T.,Udrea F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8856151/8864799/08864804.pdf?arnumber=8864804

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement;IEEE Transactions on Industry Applications;2024-05

2. 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency;Key Engineering Materials;2023-05-25

3. Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09

4. Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

5. Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs;Materials Science Forum;2022-05-31

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