Brewster’s Effect for Gaussian Beams in Gallium Arsenide
Author:
Affiliation:
1. Institute of Applied Physics RAS (IAP RAS),Dept. of Plasma Physics and High Power Electronics,Nizhny Novgorod,Russia
Funder
Russian Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10079229/10079249/10079385.pdf?arnumber=10079385
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3. Modeling of dynamic effects in a laser-driven semiconductor switch of high-power microwaves;kulygin;Journal of Infrared Millimeter and Terahertz Waves,2010
4. Sub-terahertz microsecond optically controlled switch with GaAs active element beyond the photoelectric threshold
5. 260 GHz laser-driven semiconductor switches with performance rate up to nanosecond
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