Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs
Author:
Affiliation:
1. STMicroelectronics, Stradale Primosole n. 50,Catania,Italy,95121
2. University of Modena and Reggio Emilia, Via P. Vivarelli 10,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,Italy,41125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382224.pdf?arnumber=10382224
Reference9 articles.
1. GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution
2. “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
3. Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates
4. Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers
5. Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs
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