Improved Photoluminescence Intensity of Silicon Rich Oxide Film by Surface Etching
Author:
Affiliation:
1. Optics and Electronics,National Institute of Astrophysics,Puebla,Mexico
2. Unidad Profesional Interdisciplinaria de Ingeniería Campus Tlaxcala,Instituto Politécnico Nacional,Tlaxcala,Mexico
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10332458/10332802/10332833.pdf?arnumber=10332833
Reference27 articles.
1. Silicon Nanophotonics - Basic Principles, Present Status and Perspectives
2. Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix
3. Photoluminescence of Si nanocrystals embedded in SiO2: Excitation/emission mapping
4. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3
5. (Invited) Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices
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