Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates-Reference-Cited by-同舟云学术

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Published:2014-03 Issue:1 Volume:14 Page:182-193
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Kukner Halil,Khan Seyab,Weckx Pieter,Raghavan Praveen,Hamdioui Said,Kaczer Ben,Catthoor Francky,Van der Perre Liesbet,Lauwereins Rudy,Groeseneken Guido

Funder

Agency for Innovation by Science and Technology in Flanders (IWT)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/6755472/06529142.pdf?arnumber=6529142

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