Behavior Effect of Semiconductor 2D Dopants on Time Response of TMDC-MoS2 Based Schottky-Photodiode-Reference-Cited by-同舟云学术

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Behavior Effect of Semiconductor 2D Dopants on Time Response of TMDC-MoS2 Based Schottky-Photodiode

Published:2024-05-28 Issue: Volume:83 Page:1-2
ISSN:
Container-title:2024 Photonics North (PN)
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Author:

Khalil Ahmed Abdelhady A.¹,Kana Maram T. H. Abou²,Swillam Mohamed A.³

Affiliation:

1. School of Sciences and Engineering, The American University in Cairo,Dep. of Physics,New Cairo,Egypt,11835

2. National Institute of Laser Enhanced Sciences (NILES), Cairo University,Laser Sciences and Interactions Department,Giza,Egypt,12613

3. School of Sciences and Engineering, The American University in Cairo,Department of Physics,New Cairo,Egypt,11835

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10621750/10621751/10621755.pdf?arnumber=10621755

Reference9 articles.

1. Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light–Matter Interaction toward Excellent Photodetectors

2. Single-layer MoS2 transistors

3. A synoptic review of MoS2: Synthesis to applications

4. Few-Layer MoS2: A Promising Layered Semiconductor

5. Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide

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