A monolithic watt-level SOI LDMOS linear power amplifier with through silicon via for 4G cellular applications-Reference-Cited by-同舟云学术

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A monolithic watt-level SOI LDMOS linear power amplifier with through silicon via for 4G cellular applications

Published:2013-01 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
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Author:

Giry A.,Tant G.,Lamy Y.,Raynaud C.,Vincent P.,Bertrand G.,Joblot S.,Velard R.,Coudrain P.,Carpentier J. F.,Petit D.,Rauber B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6480933/6490155/06490175.pdf?arnumber=6490175

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double Gate Drain Extended MOS with Low on-Resistance for RF Application;Silicon;2020-03-21

2. Unified Analytical Model for SOI LDMOS With Electric Field Modulation;IEEE Journal of the Electron Devices Society;2020

3. An Overview of the Development of Antenna-in-Package Technology for Highly Integrated Wireless Devices;Proceedings of the IEEE;2019-11

4. Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer;2018 IEEE 68th Electronic Components and Technology Conference (ECTC);2018-05

5. High-Voltage LDMOS Transistor With Split-Gate Structure for Improved Electrical Performance;IEEE Transactions on Electron Devices;2013-10

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