Si-based tunnel field-effect transistors for low-power nano-electronics-Reference-Cited by-同舟云学术

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Si-based tunnel field-effect transistors for low-power nano-electronics

Published:2011-06 Issue: Volume: Page:
ISSN:
Container-title:69th Device Research Conference
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Author:

Verhulst A.S.,Vandenberghe W.G.,Leonelli D.,Rooyackers R.,Vandooren A.,Zhuge J.,Kao K-H.,Soree B.,Magnus W.,Fischetti M.V.,Pourtois G.,Huyghebaert C.,Huang R.,Wang Y.,De Meyer K.,Dehaene W.,Heyns M.M.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5981430/5994397/05994494.pdf?arnumber=5994494

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ambipolarity Property in Tunnel FET to Sense High Bit Rate Signals;Lecture Notes in Electrical Engineering;2022-12-01

2. Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity;Radiation Effects and Defects in Solids;2022-10-18

3. Tunnel FET Based SRAM Cells – A Comparative Review;Communications in Computer and Information Science;2021

4. A genetic algorithm to optimize the performance of the tunneling field-effect transistor;Journal of Computational Electronics;2020-04-18

5. Boosting ON-Current in Tunnel Field-Effect Transistor;Fundamentals of Tunnel Field-Effect Transistors;2016-10-26

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