Bidimensional lifetime control for high-speed low-loss p-i-n rectifiers
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/63/18459/00849050.pdf?arnumber=849050
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Electron Extraction Mechanism in Punch-through NPN Fast Recovery Diodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
2. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes;IEEE Transactions on Power Electronics;2017-12
3. Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery;Chinese Physics Letters;2004-02
4. A TCAD comparative study of power rectifiers: modified P–i–N vs. modified mosaic contact P–i–N diode;Microelectronics Reliability;2003-02
5. Design consideration of 1000 V merged PiN Schottky diode using superjunction sustaining layer;Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
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