Effect of Buffer and Cap Layer on Thermally Stable Perpendicular Magnetic Anisotropy in Buffer/CoFeB/MgO/Cap Structure
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
2. Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Hangzhou, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5165412/9656771/09944139.pdf?arnumber=9944139
Reference23 articles.
1. The effect of interfacial oxygen migration on the PMA and thermal stability in MTJ with double MgO layers
2. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer
3. Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films
4. Impact of Ta Diffusion on the Perpendicular Magnetic Anisotropy of Ta/CoFeB/MgO
5. Interfacial perpendicular magnetic anisotropy in CoFeB/MgO structure with various underlayers
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