Statistical Simulation Study of Metal Grain-Orientation-Induced MS and MIS Contact Resistivity Variability for 7-nm FinFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8416787/08374909.pdf?arnumber=8374909
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface;Nanomaterials;2023-07-28
2. Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation;Micromachines;2022-01-10
3. Impact of N2 Coimplant on Phosphorus Diffusion and Activation for n+/p Ge Junctions;IEEE Transactions on Electron Devices;2020-02
4. Sensitivity of Source/Drain Critical Dimension Variations for Sub-5-nm Node Fin and Nanosheet FETs;IEEE Transactions on Electron Devices;2020-01
5. Process Variation-Induced Contact Resistivity Variability in Nanoscale MS and MIS Contacts;IEEE Transactions on Electron Devices;2019-10
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