OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET
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Published:2018-09
Issue:9
Volume:65
Page:3654-3661
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Tiwari Vishal A.,Divakaruni Rama,Hook Terence B.,Nair Deleep R.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials