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Ambipolar SB-FinFETs: A New Path to Ultra-Compact Sub-10 nm Logic Circuits

  • Published:2019-01 Issue:1 Volume:66 Page:255-263
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Canan Talha F.ORCID,Kaya SavasORCID,Karanth AvinashORCID,Xin HaoORCID,Louri Ahmed

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigation of Critical Delay in the Carry Skip Adders Using FinFET 18nm Technology;International Journal of Electrical and Electronics Research;2022-12-30

2. Fine-Grain Reconfigurable Logic Circuits for Adaptive and Secure Computing via Work-Function Engineered Schottky Barrier FinFETs;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2021-12

3. 4-Input NAND and NOR Gates Based on Two Ambipolar Schottky Barrier FinFETs;2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2020-11-23

4. Reconfigurable Gates with Sub-10nm Ambipolar SB-FinFETs for Logic Locking & Obfuscation;2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS);2020-08

5. Ultracompact and Low-Power Logic Circuits via Workfunction Engineering;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2019-12
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