An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate Misalignment-Reference-Cited by-同舟云学术

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An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate Misalignment

Published:2019-02 Issue:2 Volume:66 Page:868-875
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Musalgaonkar Gaurav^ORCID,Sahay Shubham^ORCID,Saxena Raghvendra Sahai^ORCID,Kumar Mamidala Jagadesh^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8617115/08590780.pdf?arnumber=8590780

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Performance Projection of Virtually Doped Dual Gate Junctionless IMOS;Silicon;2023-05-06

2. Study of ambipolar and linearity behavior of the misaligned double gate-drain dopant-free Nano-TFET: Design and performance enhancement;Microelectronics Journal;2023-03

3. Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET;Alexandria Engineering Journal;2023-02

4. A steep switching WSe2 impact ionization field-effect transistor;Nature Communications;2022-10-14

5. Emerging reconfigurable electronic devices based on two‐dimensional materials: A review;InfoMat;2022-08-23

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