Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI-Reference-Cited by-同舟云学术

Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI

Published:2019-01 Issue:1 Volume:66 Page:553-560
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xiangdong^ORCID,Zhao Ming,Bakeroot Benoit^ORCID,Geens Karen,Guo Weiming,You Shuzhen^ORCID,Stoffels Steve,Lempinen Vesa-Pekka,Sormunen Jaakko,Groeseneken Guido^ORCID,Decoutere Stefaan^ORCID

Funder

Electronic Component Systems for European Leadership Joint Undertaking

European Union’s Horizon 2020 Research and Innovation Program and Austria, Belgium, Germany, Netherlands, Norway, Italy, Slovakia, Spain, and United Kingdom

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8585319/08532115.pdf?arnumber=8532115

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