Role of Biasing and Device Size on Phonon Scattering in Graphene Nanoribbon Transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8359231/08345708.pdf?arnumber=8345708
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1. Ultra Low Power-Low Noise GNRFET Wideband Amplifier for Cryogenic Applications;NAECON 2023 - IEEE National Aerospace and Electronics Conference;2023-08-28
2. Strain Engineering of Graphene Nanoribbon Transistors Made Using Analytical Quasi-Ballistic Transport Model;Journal of Nano Research;2021-10-25
3. Impact of electrostatic doping level on the dissipative transport in graphene nanoribbons tunnel field-effect transistors;Carbon;2019-11
4. Impact of carrier concentration and bandgap on the performance of double gate GNR-FET;Superlattices and Microstructures;2019-06
5. Impact of phonon scattering on digital characteristics and RF performance of graphene nanoribbon FETs;Superlattices and Microstructures;2019-04
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