Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8299498/08272313.pdf?arnumber=8272313
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2-D MBCFETs;IEEE Transactions on Electron Devices;2023-03
2. TCAD Analysis of Substrate Thickness of a 10nm Vertical Double Gate SOI n-Type MOSFET;2023 5th International Conference on Smart Systems and Inventive Technology (ICSSIT);2023-01-23
3. TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications;2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT);2022-10-03
4. Compact drain current modeling of planar InGaAs quantum well MOSFET;Micro and Nanostructures;2022-09
5. A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs;IEEE Transactions on Electron Devices;2022-01
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