All InGaAs Unipolar Barrier Infrared Detectors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8318799/08299560.pdf?arnumber=8299560
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical design of uncooled mid-infrared PbSe P+pBn+ barrier detectors;Journal of Physics D: Applied Physics;2024-01-08
2. Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches;Frontiers of Optoelectronics;2023-04-06
3. Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors;Infrared Physics & Technology;2022-06
4. A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures;Quantum Sensing and Nano Electronics and Photonics XVIII;2022-03-05
5. Crosstalk analysis for mesa-based in-device passivated InGaAs photodetectors;Optical Components and Materials XIX;2022-03-04
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