High-Scalability Enhanced Gate Drivers for SiC MOSFET Modules With Transient Immunity Beyond 100 V/ns
Author:
Funder
Office of Naval Research
U.S. Department of Energy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
https://ieeexplore.ieee.org/ielam/63/9127988/9035654-aam.pdf
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