Online Junction Temperature Extraction With Gate Voltage Under Nontrigger Current for High-Voltage Thyristor
Author:
Affiliation:
1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China
2. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
National Natural Science Foundation of China
Pioneer
Leading Goose
R&D Program of Zhejiang
Natural Science Foundation of Hebei Province
Science Foundation for Distinguished Young Scholars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10197471/10159424.pdf?arnumber=10159424
Reference16 articles.
1. Material Properties and Transport Physics
2. Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications
3. Reverse current instability of power silicon diodes (thyristors) at high temperature and the junction surface leakage current
4. A Novel Approach to Accurately Determine the $t_{q}$ Parameter of Thyristors
5. Review of Thyristor Junction Temperature Calculation Methods
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Online Monitoring Local Junction Temperature of High-Power Thyristors Based on Peak Stray Gate Current;IEEE Transactions on Power Electronics;2024-08
2. High-Voltage Thyristor Leakage Current Measurement Using Gate Voltage Vgk Under Non-trigger Current;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Online Junction Temperature Extraction With Gate Voltage for Thyristor Considering the Pressure Variation;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10
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