Frequency-Domain Thermal Coupling Model of Multi-Chip Power Module
Author:
Affiliation:
1. Key Laboratory of Control of Power Transmission and Conversion, Ministry of Education, Shanghai Jiao Tong University, Shanghai, China
2. Shanghai Electrical Apparatus Research Institute (Group) Company, Ltd., Shanghai, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10067246/10015848.pdf?arnumber=10015848
Reference32 articles.
1. Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices
2. Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory
3. Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters
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