Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot
Author:
Affiliation:
1. Department of Electrical Engineering, Beihang University, Beijing, China
2. Department of Energy, Aalborg University, Aalborg, Denmark
3. Department of Electrical Engineering, Tsinghua University, Beijing, China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
State Key Laboratory of Power System and Generation Equipment
National Key R&D Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10046180/10013721.pdf?arnumber=10013721
Reference37 articles.
1. Simplified Junction Temperature Estimation using Integrated NTC Sensor for SiC Modules
2. Improved spice models of aluminum electrolytic capacitors for inverter applications
3. Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range
4. An automatic technique to obtain the equivalent circuit of aluminum electrolytic capacitors
5. Online Junction Temperature Estimation of SiC Power mosfets Through On-State Voltage Mapping
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