Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module With Parallel-Connected SiC MOSFETs
Author:
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9346101/09303479.pdf?arnumber=9303479
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1. Improved Packaging of Power Module With Low-Permittivity Material for Low Common-Mode Noise and High Reliability;IEEE Transactions on Power Electronics;2024-11
2. A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling;IEEE Transactions on Power Electronics;2024-09
3. An asymmetrical cancellation method for common mode voltage in full‐bridge LLC converter utilizing nonideal transformer;International Journal of Circuit Theory and Applications;2024-08-08
4. Conducted EMI Model and Coupling Resonant Mechanism Analysis of Multi-Cell Converter System;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
5. An Accurate Predictive Method of Crosstalk Peaks Considering Dynamic Transfer Characteristics and Miller Ramp for SiC MOSFETs;IEEE Transactions on Power Electronics;2024-05
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