200 GHz interconnects for InP-on-BiCMOS integration-Reference-Cited by-同舟云学术

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200 GHz interconnects for InP-on-BiCMOS integration

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE MTT-S International Microwave Symposium Digest (MTT)
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Author:

Ostermay I.,Schmueckle F.-J.,Doerner R.,Thies A.,Heinrich W.,Krueger O.,Krozer V.,Jensen T.,Kraemer T.,Lisker M.,Trusch A.,Matthus E.,Borokhovych Y.,Tillack B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6684335/6697324/06697393.pdf?arnumber=6697393

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources;International Journal of Circuit Theory and Applications;2023-07-27

2. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate;Journal of Semiconductors;2018-04-18

3. Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology;International Journal of Microwave and Wireless Technologies;2015-11-13

4. Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology;International Journal of Microwave and Wireless Technologies;2014-05-12

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