200 GHz interconnects for InP-on-BiCMOS integration
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6684335/6697324/06697393.pdf?arnumber=6697393
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources;International Journal of Circuit Theory and Applications;2023-07-27
2. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate;Journal of Semiconductors;2018-04-18
3. Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology;International Journal of Microwave and Wireless Technologies;2015-11-13
4. Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology;International Journal of Microwave and Wireless Technologies;2014-05-12
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