Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation-Reference-Cited by-同舟云学术

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Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

Published:2007-06 Issue: Volume: Page:
ISSN:0149-645X
Container-title:2007 IEEE/MTT-S International Microwave Symposium
language:
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Author:

Shen L.,Pei Y.,McCarthy L.,Poblenz C.,Corrion A.,Fichtenbaum N.,Keller S.,Denbaars S. P.,Speck J. S.,Mishra U. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4263706/4263707/04263893.pdf?arnumber=4263893

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Dispersion Suppression in High-Frequency GaN Devices;Crystals;2022-10-16

2. Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching;IEEE Electron Device Letters;2020-12

3. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs;IEEE Transactions on Electron Devices;2018-01

4. Lateral GaN Devices for Power Applications (from kHz to GHz);Power Electronics and Power Systems;2016-09-09

5. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy;Journal of Applied Physics;2014-05-21

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