W-Band GaN MMIC with 842 mW output power at 88 GHz-Reference-Cited by-同舟云学术

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W-Band GaN MMIC with 842 mW output power at 88 GHz

Published:2010-05 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE MTT-S International Microwave Symposium
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Author:

Micovic M.,Kurdoghlian A.,Shinohara K.,Burnham S.,Milosavljevic I.,Hu M.,Corrion A.,Fung A.,Lin R.,Samoska L.,Kangaslahti P.,Lambrigtsen B.,Goldsmith P.,Wong W.S.,Schmitz A.,Hashimoto P.,Willadsen P. J.,Chow D. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5503841/5514662/05516911.pdf?arnumber=5516911

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ka Band GaN MIS-HEMT with ALD-SiN Gate Dielectric and Lp-SiN Passivation Layer;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

3. W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-02

4. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023

5. $V$- and $W$-Band Millimeter-Wave GaN MMICs;IEEE Journal of Microwaves;2023-01

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