Author:
Jardel O.,Callet G.,Lancereau D.,Jacquet J-C.,Reveyrand T.,Sarazin N.,Aubry R.,Leger S.,Chartier E.,Oualli M.,Dua C.,Piotrowicz S.,Morvan E.,Di Forte Poisson M.A.,Delage S.L.
Cited by
3 articles.
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1. InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications;International Journal of Microwave and Wireless Technologies;2017-11-27
2. Hybrid Microwave Power Amplifier Design;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15
3. InAlN/GaN HEMTs based L-band high-power packaged amplifiers;International Journal of Microwave and Wireless Technologies;2014-02-25