Author:
Yamauchi Kazuhisa,Noto Hifumi,Nonomura Hiroyuki,Kunugi Satoshi,Nakayama Masatoshi,Hirano Yoshihito
Cited by
4 articles.
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1. A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology;IEEE Microwave and Wireless Technology Letters;2024-01
2. A Three Stage Ku-Band GaN HEMT Power Amplifier;2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22);2022-04-29
3. Design of Ku Band HEMT-Based Class AB Amplifier;Lecture Notes in Electrical Engineering;2021-12-14
4. A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-11-30