A 68% efficiency, C-band 100W GaN power amplifier for space applications

Author:

Yamasaki T.,Kittaka Y.,Minamide H.,Yamauchi K.,Miwa S.,Goto S.,Nakayama M.,Kohno M.,Yoshida N.

Publisher

IEEE

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress;IEEE Transactions on Electron Devices;2024

2. Design of Radio Frequency Power Amplifier Module at C-Band for Data Communication Link;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

3. 90W GaN High Power Amplifier for Ku-band Satellite Communication;2023 31st Telecommunications Forum (TELFOR);2023-11-21

4. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

5. Investigation of radiation response for III-V binary compound semiconductors due to protons using Geant4;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-10

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