The implementation of physical boundary conditions in the Monte Carlo simulation of electron devices-Reference-Cited by-同舟云学术

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The implementation of physical boundary conditions in the Monte Carlo simulation of electron devices

Published:1994 Issue:10 Volume:13 Page:1241-1246
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Woolard D.L.,Tian H.,Littlejohn M.A.,Kim K.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx1/43/7650/00317467.pdf?arnumber=317467

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MONTE CARLO TRANSPORT AND HEAT GENERATION IN SEMICONDUCTORS;Annual Review of Heat Transfer;2014

2. Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations;Journal of Computational Electronics;2008-02-20

3. Monte Carlo simulation of semiconductor transport;Theory of Transport Properties of Semiconductor Nanostructures;1998

4. Physical models of ohmic contact for Monte Carlo device simulation;Solid-State Electronics;1996-04

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