CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD-Reference-Cited by-同舟云学术

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CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

Published:2002-08 Issue:8 Volume:14 Page:1031-1033
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Shin J.-H.,Yoo B.-S.,Han W.-S.,Kwon O.-K.,Ju Y.-G.,Lee J.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/21991/01021959.pdf?arnumber=1021959

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1. Characterization of lasing regimes of 1.3 µm vertical-cavity surface-emitting lasers based on a short-period InGaAs/InGaAlAs superlattice;Journal of Optical Technology;2021-12-01

2. Modeling and optimization of single-mode vertical cavity surface emitting lasers;Journal of Nanophotonics;2016-10-26

3. Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission;Journal of the Optical Society of Korea;2012-09-25

4. NEAR FIELD AND FAR FIELD EFFECTS IN THE TAGUCHI-OPTIMIZED DESIGN OF AN InP/GaAs-BASED DOUBLE WAFER-FUSED MQW LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER;Journal of Nonlinear Optical Physics & Materials;2012-03

5. Experimental and numerical analysis on temporal dynamics of polarization switching in an injection-locked 155-μm wavelength VCSEL;Optics Express;2011-08-15

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