Layout Inductance Assisted Novel Turn-on Switching Loss Recovery Technique for SiC MOSFETs-Reference-Cited by-同舟云学术

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Layout Inductance Assisted Novel Turn-on Switching Loss Recovery Technique for SiC MOSFETs

Published:2021-10 Issue:4 Volume:2 Page:513-525
ISSN:2687-9735
Container-title:IEEE Journal of Emerging and Selected Topics in Industrial Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Top. Ind. Electron.

Author:

Miryala Vamshi Krishna^ORCID,Pandey Vibhav^ORCID,Hatua Kamalesh^ORCID,Bhattacharya Subhashish^ORCID

Funder

Ministry of Electronics and Information Technology

National Mission of Power Electronics Technology Phase-3 program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

http://xplorestaging.ieee.org/ielx7/8847244/9546925/09517006.pdf?arnumber=9517006

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Cost Effective Gate Drive Circuit for Improved Switching Performance in SiC Traction Inverters;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

2. Design of Current Transformer for in Situ Current Measurement of Discrete SiC Power Devices;IEEE Journal of Emerging and Selected Topics in Industrial Electronics;2022-10

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