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Edge passivation and related electrical stability in silicon power devices

  • Published:1990 Issue:1 Volume:3 Page:12-17
  • ISSN:0894-6507
  • Container-title:IEEE Transactions on Semiconductor Manufacturing
  • language:
  • Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Salkalachen S.,Krishnan N.H.,Krishnan S.,Satyamurthy H.B.,Srinivas K.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Passivation Layer Interface Charge Induced Blocking Capability Degradation in Thyristor;2023 IEEE 4th International Conference on Electrical Materials and Power Equipment (ICEMPE);2023-05-07

2. Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic;Microelectronics Reliability;2011-03

3. The semiconductor - dielectric interface from PN junction periphery and its influence on reliability of power devices at high temperature;2008 14th International Workshop on Thermal Inveatigation of ICs and Systems;2008-09

4. Effect of equivalent surface charge density on electrical field of positively beveled p-n junction;Journal of Shanghai University (English Edition);2008-02

5. The PN Junction Passivation Process and Performance of Semiconductor Devices;2007 30th International Spring Seminar on Electronics Technology (ISSE);2007-05
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