24.3 A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power
Author:
Affiliation:
1. Tsinghua University,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067586.pdf?arnumber=10067586
Reference8 articles.
1. A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier with SlotlineBased Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency;li;ISSCC,2022
2. Rapid and Energy-Efficient Molecular Sensing Using Dual mmWave Combs in 65nm CMOS: A 220-to-320GHz Spectrometer with 5.2mW Radiated Power and 14.6-to-19.5dB Noise Figure;wang;ISSCC,2017
3. 108–316- and 220–290-GHz Ultrabroadband Distributed Frequency Doublers
4. 220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology
5. 25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems
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