Temperature coefficient of resolution of lateral bipolar magnetotransistors-Reference-Cited by-同舟云学术

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Temperature coefficient of resolution of lateral bipolar magnetotransistors

Published:1993-05 Issue:5 Volume:40 Page:910-917
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kung W.,Nathan A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/5453/00210198.pdf?arnumber=210198

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling noise correlation behavior in dual-collector magnetotransistors using small signal equivalent circuit analysis;IEEE Transactions on Electron Devices;1996-06

2. Quantum-well Hall devices in Si-delta-doped Al/sub 0.25/Ga/sub 0.75/As/GaAs and pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/GaAs heterostructures grown by LP-MOCVD: performance comparisons;IEEE Transactions on Electron Devices;1996

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