A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell

Author:

Perng-Fei Lin ,Kuo J.B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Content Addressable Memory Design in 3D pNML for Energy-Aware Sustainable Computing;Journal of Circuits, Systems and Computers;2022-03-24

2. Design and Comparative Valuation of an MSML Based Low Power Content Addressable Memory Cell;2021 IEEE Bombay Section Signature Conference (IBSSC);2021-11-18

3. Dynamic Reconfigurable Ternary Content Addressable Memory for OpenFlow-Compliant Low-Power Packet Processing;IEEE Transactions on Circuits and Systems I: Regular Papers;2016-10

4. Heterogeneous graphene–CMOS ternary content addressable memory;Journal of Parallel and Distributed Computing;2014-06

5. Soft-Delay-Error Evaluation in Content-Addressable Memory;2014 IEEE 44th International Symposium on Multiple-Valued Logic;2014-05

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